NTLJD2105L
Power MOSFET
8 V, 4.3 A, m Cool ] High Side Load Switch
with Level Shift, 2x2 mm WDFN Package
Features
? WDFN 2x2 mm Package with Exposed Drain Pads Offers Excellent
Thermal Performance
? Low R DS(on) P?Channel Load Switch with N?channel MOSFET for
Level Shift
? N Channel Operated at 1.5 V Gate Drive Voltage Level
? P Channel Operated at 1.5 V Supply Voltage
? Same Footprint as SC88
? Low Profile (<0.8 mm) Allows it to Fit Easily into Extremely Thin
V INMAX
20 V
http://onsemi.com
R DS(on) MAX
50 m W @ 4.5 V
60 m W @ 2.5 V
80 m W @ 1.8 V
115 m W @ 1.5 V
I L MAX
4.3 A
?
?
Environments
ESD Protection
These are Pb?Free Devices
4
Q2
2, 3
Applications
? High Slide Load Switch with Level Shift
? Optimized for Power Management in Ultra Portable Equipment
5
Q1
6
MOSFET(Q2) MAXIMUM RATINGS
(T J = 25 ° C unless otherwise stated)
1
Parameter
Symbol
Value
Unit
Q2 Input Voltage (V DS , P?Channel)
Q1 On/Off Voltage (V GS , N?Channel)
V IN
V ON/OFF
8
6
V
V
MARKING
DIAGRAM
2 JN M G 5
Continuous Load
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I L
4.3
3.1
A
Pin 1
WDFN6
CASE 506AZ
1 6
3 G 4
Power Dissipation
Steady
T A = 25 ° C
P D
1.56
W
(Note 1)
State
JN = Specific Device Code
Continuous Load
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Load
Current
Steady
State
t p = 10 m s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I L
P D
I LM
2.5
1.8
0.52
20
A
W
A
M = Date Code
G = Pb?Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
T J ,
T STG
I S
T L
?55 to
150
?2.7
260
° C
A
° C
S1
D2
1
2
D1/G2
6 D1/G2
5 G1
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
D2
3
D2
4
S2
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Top View)
1. Surface?mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surface?mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
March, 2007 ? Rev. 1
1
Publication Order Number:
NTLJD2105L/D
相关PDF资料
NTLJD3115PTAG MOSFET P-CH DUAL 20V 4.1A 6-WDFN
NTLJD3119CTBG MOSF N/P-CH 20V 2.6A/2.3A 6WDFN
NTLJD3181PZTBG MOSFET P-CH DUAL 20V 4A 6WDFN
NTLJD3182FZTBG MOSFET P-CH 20V 2.2A 6-WDFN
NTLJD3183CZTBG MOSFET COMPL 20V LOW PRO 6WDFN
NTLJD4116NT1G MOSFET N-CHAN DUAL 30V 6-WDFN
NTLJD4150PTBG MOSFET P-CH DUAL 30V 3.2A 6WDFN
NTLJF3117PTAG MOSFET P-CH 20V 2.3A 6-WDFN
相关代理商/技术参数
NTLJD3115P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET
NTLJD3115PT1G 功能描述:MOSFET PFET 2X2 20V 4.1A 106MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJD3115PTAG 功能描述:MOSFET PFET 2X2 20V 4.1A 106MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJD3119C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Package
NTLJD3119CTAG 功能描述:MOSFET COMP 2X2 20V 3.8A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJD3119CTBG 功能描述:MOSFET COMP 2X2 20V 3.8A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLJD3181PZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Package
NTLJD3181PZTAG 功能描述:MOSFET 20V UCOOL DUAL P-CHN 4.1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube